| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to field of obtaining semi-conductor materials, which are applied as substrate material in isoperiod heterostructures based on triple and fourfold solid solutions in systems Al-Ga-As-Sb and In-Ga-As-Sb, which make it possible to create broad range of optoelectronic devices (sources and receivers of irradiation on spectral range 1.3-2.5 mcm). Method includes synthesis from initial components and growing of monocrystals by method of Czochralski in hydrogen atmosphere on seed, oriented in crystallographic direction [100]. To initial components added is isovalent admixture of indium in form of especially pure indium antimonide (InSb) in the interval of elementary indium concentration (2-4)×10at/cm, with synthesis and growing of monocrystals being realised in single technological cycle.EFFECT: invention makes it possible to obtain big-volume low dislocation density monocrystals of gallium antimonide with reduced dislocation density.2 cl, 1 dwg, 2 tbl, 1 ex |
