SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an SiC semiconductor device capable of increasing the channel mobility without introducing excessive fixed charges into the interface between an SiC layer and a gate insulating film.SOLUTION: The semiconductor device includes: an SiC semiconductor layer 111; and a gate insulating film 117 and a gate electrode 116 formed in order at the side where a first ohmic electrode 113 of the SiC semiconductor layer 111 is provided. The SiC semiconductor layer 111 is formed in contact with the gate insulating film 117 and has a group V element containing region 137 including a group V element. The concentration peak of the group V element in the group V element containing region 137 is located within 5 nm from the interface with the gate insulating film 117. The concentration of carbon in the gate insulating film 117 is 1 atom% or less.