FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve device characteristics by reducing the contact resistance between a SiGe layer and wiring without causing the occurrence of defect in the SiGe layer in a configuration that provides tensile strain to a Ge channel through the SiGe layer.SOLUTION: A field-effect semiconductor device having a Ge channel and a source-drain region of SiGe includes: a semiconductor layer 10 containing Ge; a gate electrode 31 provided on the semiconductor layer 10 via a gate insulating film 20; a source-drain region 60 provided in the semiconductor layer 10 so as to sandwich a channel region under the gate electrode 31, providing tensile strain to the channel region, and composed of SiGe(0