发明名称 |
MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES |
摘要 |
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. |
申请公布号 |
WO2014190189(A2) |
申请公布日期 |
2014.11.27 |
申请号 |
WO2014US39208 |
申请日期 |
2014.05.22 |
申请人 |
WANG, SHIH-YUAN;WANG, SHIH-PING |
发明人 |
WANG, SHIH-YUAN;WANG, SHIH-PING |
分类号 |
H01L31/06 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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