SILICON-BASED ELECTRONICS WITH DISABLING FEATURE

摘要

Silicon-based circuitry is dissolved or otherwise disabled in a controlled manner by reactive materials provided beneath the insulating layer on which the circuitry is formed. Heat and/or light induced acid generating materials are provided for corroding one or more circuitry components. Additionally and/or alternatively, gas-producing materials are deposited in compartments beneath the insulating layer. The gas-producing materials cause pressure to rise within the compartments, damaging the chip. Chemical reactions within the chip may be facilitated by heating elements and/or light generating elements embedded within the chip and actuated by triggering circuits.