| 发明名称 |
SOLD-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS |
| 摘要 |
A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels. |
| 申请公布号 |
US2014346628(A1) |
申请公布日期 |
2014.11.27 |
| 申请号 |
US201414279632 |
申请日期 |
2014.05.16 |
| 申请人 |
Sony Corporation |
发明人 |
Okazaki Hiromi |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state imaging device, comprising:
a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer; photoelectric conversion units provided for the respective pixels in the semiconductor layer; and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels. |
| 地址 |
Tokyo JP |
