| 摘要 |
<p>The present invention relates to an amorphous oxide semiconductor layer that prevents instability caused by light or an electric field, and a thin film transistor that has a channel layer configured to contain the amorphous oxide semiconductor layer. The thin film transistor according to an embodiment of the present invention contains: an amorphous oxide semiconductor material containing oxygen; and a stabilizer additive that prevents the instability caused by light or an electric field by preventing oxygen bonding. In the stabilizer additive, a lone pair s atom forms an electronic band tail in the amorphous oxide so that peroxide formation caused by oxygen bonding is prevented.</p> |
