发明名称 |
METHOD FOR CLEANING SEMICONDUCTOR WAFER |
摘要 |
<p>The present invention is directed to a method for cleaning a semiconductor wafer which comprises filling a cleaning solution containing ammonia and aqueous hydrogen peroxide in a cleaning tank comprising a synthetic quartz material with an average Al concentration of 1 ppb or less, immersing the above-mentioned semiconductor wafer in the above-mentioned cleaning solution, and cleaning the above-mentioned semiconductor wafer so that a surface etching rate of the above-mentioned synthetic quartz by the above-mentioned cleaning solution becomes 0.3 nm/min or less, and according to this method, a cleaning method which can maintain the Al concentration in the ammonia and per-water cleaning solution to a low concentration and can improve surface cleanliness of the semiconductor wafer is provided.</p> |
申请公布号 |
SG11201406412V(A) |
申请公布日期 |
2014.11.27 |
申请号 |
SG11201406412V |
申请日期 |
2013.04.18 |
申请人 |
SHIN-ETSU HANDOTAI CO.,LTD. |
发明人 |
ABE, TATSUO;KABASAWA, HITOSHI |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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