发明名称 PIXEL UNIT DRIVING CIRCUIT AND DRIVING METHOD, PIXEL UNIT AND DISPLAY APPARATUS
摘要 There are provided a pixel unit driving circuit and driving method, pixel unit and display apparatus. The pixel unit driving circuit is used for driving a light-emitting device to emit light, and comprises a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3) and a storage capacitor (Cs). A gate of the first thin film transistor (T1) is connected with a control line (Gate), a first electrode thereof is connected with a data line (Data), and a second electrode thereof is connected with a first node (A). One gate of the second thin film transistor (T2) is connected with the control line (Gate) and the other gate is connected with a second scan line (Scan2), a first electrode thereof is connected with the storage capacitor (Cs), and a second electrode thereof is connected with a second node (B). One gate of the third thin film transistor (T3) is connected with the first node (A) and the other gate is connected with the second scan line (Scan2), a first electrode thereof is connected with a power supply (Vdd), and a second electrode thereof is connected with the second node (B). One terminal of the storage capacitor is connected with the first node (A), and the other terminal is connected with the first electrode of the second thin film transistor (T2). One terminal of the light-emitting device is connected with the second node (B), and the other terminal thereof is grounded. The pixel unit driving circuit can reduce an influence on a driving voltage caused by variations in threshold voltage.
申请公布号 US2014346968(A1) 申请公布日期 2014.11.27
申请号 US201314355041 申请日期 2013.03.29
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Meng Qingchao;Liu Xiaoyan;Wang Wenjie;Su Xiaojun
分类号 H05B33/08 主分类号 H05B33/08
代理机构 代理人
主权项 1. A pixel unit driving circuit for driving a light-emitting device to emit light, comprising a first thin film transistor, a second thin film transistor, a third thin film transistor and a storage capacitor, wherein the first to third thin film transistors comprise gates, first electrodes and second electrodes; the gate of the first thin film transistor is connected with a control line, the first electrode thereof is connected with a data line, and the second electrode thereof is connected with a first node; the second thin film transistor has two gates, one gate thereof is connected with the control line and another gate is connected with a second scan line, the first electrode thereof is connected with the storage capacitor, and the second electrode thereof is connected with a second node; the third thin film transistor has two gates, one gate thereof is connected with the first node and another gate is connected with the second scan line, the first electrode thereof is connected with a power supply, and the second electrode thereof is connected with the second node; one terminal of the storage capacitor is connected with the first node, and the other terminal thereof is connected with the first electrode of the second thin film transistor; and one terminal of the light-emitting device is connected with the second node, and the other terminal thereof is grounded.
地址 Beijing CN