| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress quantum efficiency deterioration in a short wavelength area in a photoelectric element that uses a CZTS-based light absorption layer. <P>SOLUTION: A photoelectric element manufacturing method comprises: a light absorption layer formation step of forming a CZTS-based light absorption layer on a base material surface; a first CBD step of soaking the base material in a first CBD solution including Cd salt, a first sulfur source, and a first sulfide composition aid and forming a CdS film on the surface of the CZTS-based light absorption layer; and a second CBD step of soaking the base material in a second CBD solution including Zn salt, a second sulfur source, and a second sulfide composition aid and forming a Zn (S, O, OH)) film on the surface of the CdS film. The photoelectric elements that can be obtained in this method are also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
