| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can improve a flatness of a surface to be polished in CMP and reduce a polishing defect (scratch) at the same time and a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: The chemical mechanical polishing pad has a polishing layer formed with a composition including thermoplastic polyurethane. The specific gravity of the polishing layer is 1.15 or higher and 1.30 or lower and the duro D hardness of the polishing layer is 50D or higher and 80D or lower. |
