| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which reduces an area for layout and improves the reliability of memory storage. <P>SOLUTION: In the nonvolatile semiconductor memory cell, a first selection transistor, two floating gate type memory devices and a second selection transistor are sequentially connected in series, and drains and sources for the respective elements are arranged in series in a transistor forming part 220 as a layout. An n+ type diffused layer 219 as a control gate electrode of the memory device is placed in parallel to the transistor forming part, polysilicons 203a and 203b as a floating gate of the memory device are placed in a direction crossing vertically the transistor forming part 220 and the n+ type diffused layer 219, and polysilicons 214a and 214b as the gate electrode of the first and second selection transistors are placed in a direction crossing vertically the transistor forming part 220. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
