PLASMA PROCESS SYSTEM

摘要

The present invention relates to a plasma processing system. The plasma processing system of the present invention includes a facility front end module including a carrier loading multiple substrates; a first transfer chamber connected to the facility front end module and including a first substrate transfer device to transfer a substrate; a load lock chamber connected to the first transfer chamber; a cleaning chamber including a substrate support laminated on a lower or upper part of the load lock chamber to place plasma-processed substrates thereon and cleaning the substrates by plasma induced into the chamber by a wireless frequency antenna; a second transfer chamber connected to the load lock chamber and the cleaning chamber and including a second substrate transfer device to transfer the substrate; and at least one process chamber connected to the second transfer chamber and including a substrate support in which a processed substrate is placed, an upper electrode installed to correspond to the substrate support, and an edge plasma generating part formed in a ring shape along an outer side of the upper electrode. According to the plasma processing system, the processed substrate is evenly processed by using plasma divided into a central area and an edge area in the process chamber. Moreover, the processed substrate is selectively processed by independently generating the plasma in the central area or edge area. And, multiple substrates processed in multiple process chambers are consecutively processed without waiting time by using the cleaning chamber.