发明名称 |
MAGNETIC RANDOM ACCESS MEMORY DEVICES INCLUDING MULTI-BIT CELLS |
摘要 |
A magnetic random access memory ("MRAM") cell includes: (1) a first magnetic layer having a first magnetization direction and a magnetic anisotropy axis; (2) a second magnetic layer having a second magnetization direction; and (3) a spacer layer disposed between the first magnetic layer and the second magnetic layer. The MRAM cell also includes a field line magnetically coupled to the MRAM cell and configured to induce a write magnetic field along a magnetic field axis, and the magnetic anisotropy axis is tilted relative to the magnetic field axis. During a write operation, the first magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis. |
申请公布号 |
EP2718929(A4) |
申请公布日期 |
2014.11.26 |
申请号 |
EP20120797542 |
申请日期 |
2012.06.08 |
申请人 |
CROCUS TECHNOLOGY INC. |
发明人 |
EL BARAJI, MOURAD;BERGER, NEAL;LOMBARD, LUCIEN;PREJBEANU, LUCIAN;ALVES FERREIRA COSTA E SOUSA, RICARDO;PRENAT, GUILLAUME |
分类号 |
G11C11/56;G11C11/16 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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