| 摘要 |
<p>A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatus 10 includes a vacuum chamber 100 having therein a mounting table 115 configured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguide 225 through which a high frequency power for exciting plasma is supplied into the vacuum chamber 100; a waveguide path 205, connected to the first coaxial waveguide 225, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate.</p> |
