| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that an electronic element cannot be mounted practically on a silicon carbide when mounting a device such as an electronic element because a high-frequency loss of the silicon carbide substrate is large. SOLUTION: Because it is found that an electronic element can be mounted and sufficiently operated when a silicon nitride substrate has a high-frequency loss under 20 GHz of 2.0 dB/mm and under, the silicon carbide substrate having a high frequency loss of 2.0 dB/mm and over is heated at 2000°C and over. According to this heat treatment, a high frequency loss under 20 GHz can be made 2.0 dB/mm and under. Further, by manufacturing the silicon nitride substrate by CVD without flowing nitride to a heater, the high frequency loss can be made 2.0 dB/mm and under. COPYRIGHT: (C)2013,JPO&INPIT |
