Methods and apparatus for rapidly responsive heat control in plasma processing devices

摘要

Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

主权项

1. An apparatus for processing a substrate, comprising:
a process chamber; an RF source to provide RF energy to form a plasma in the process chamber; a component disposed in the process chamber so as to be heated by the plasma when formed; a heater configured to heat the component; a heat exchanger configured to remove heat from the component; a chiller coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein; a controller for opening or closing the flow control valve; a temperature measuring device situated to indicate a temperature of the component; and input(s) into the controller indicating the power going to the plasma forming electrodes or groups of such electrodes; wherein the controller substantially operates according to the following control parameters:if ΣωiPi > PUL and T > Tsp − dTLLopen flow control valveif ΣωiPi < PLL and T < Tsp + dTULclose flow control valve where Tsp is a target temperature, dTUL is a predetermined upwards temperature differential from the target temperature, dTLL is a predetermined downwards temperature differential from the target temperature, Pi is the power consumption of one of i=1 to n plasma-forming electrodes and/or groups thereof, where co, is a weighting factor for one of i=1 to n sources of RF power being delivered to the process chamber, PUL is a predetermined upper limit for summed power consumption, and PLL is a predetermined lower limit for summed power consumption.