| 发明名称 | Memory device and operating method of memory device and memory system | ||
| 摘要 | An operating method of a memory device includes entering a repair mode, receiving an active command and a fail address, and temporarily storing the received command and address, receiving a write command, and determining whether to perform a program operation, when the program operation is determined to be performed, programming the temporarily-stored fail address into a programmable storage unit, and receiving a precharge command before the programming of the temporarily-stored fail address is completed. | ||
| 申请公布号 | US8897087(B2) | 申请公布日期 | 2014.11.25 |
| 申请号 | US201314031814 | 申请日期 | 2013.09.19 |
| 申请人 | SK Hynix Inc. | 发明人 | Yoon Hyun-Su;Kwean Ki-Chang |
| 分类号 | G11C29/00;G11C7/00 | 主分类号 | G11C29/00 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. An operating method of a memory device, comprising: entering a repair mode; receiving an active command and a fail address, and temporarily storing the received command and address to a temporary storage unit; receiving a write command, and determining whether to perform a program operation; when the program operation is determined to be performed, programming the temporarily-stored fail address into a programmable storage unit; and receiving a precharge command before the programming of the temporarily-stored fail address is completed. | ||
| 地址 | Gyeonggi-do KR | ||