Programmable memory elements, devices and methods having physically localized structure

摘要

A programmable memory element can include an insulating layer formed over a bottom structure; an opening formed in the insulating layer; a sidewall structure formed next to side surfaces of the opening; a tapered structure formed within the opening adjacent to the sidewall structure; and a solid electrolyte forming at least a portion of a structure selected from: the bottom structure, the sidewall structure, and the tapered structure.

主权项

1. A programmable memory element, having at least one localized element structure, comprising:
at least an anode electrode, solid electrolyte, and cathode electrode aligned with one another along a substantially vertical axis; wherein at least one of the electrodes includes a tapered structure having a wide portion that tapers to a narrow portion in the vertical axis direction, and the anode electrode is formed from at least one element oxidizable to ion conduct in the solid electrolyte; wherein the tapered structure forms at least part of the anode electrode and is formed within an opening having a sidewall structure formed thereon, the solid electrolyte is formed below the opening, and the cathode electrode is formed below the solid electrolyte.