发明名称 Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures
摘要 An epitaxial process includes the following steps. A first gate and a second gate are formed on a substrate. Two first spacers are formed on the substrate beside the first gate and the second gate respectively. Two first epitaxial layers having first profiles are formed in the substrate beside the two first spacers respectively. A second spacer material is formed to cover the first gate and the second gate. The second spacer material covering the second gate is etched to form a second spacer on the substrate beside the second gate and expose the first epitaxial layer beside the second spacer while reserving the second spacer material covering the first gate. The exposed first epitaxial layer in the substrate beside the second spacer is replaced by a second epitaxial layer having a second profile different from the first profile.
申请公布号 US8895396(B1) 申请公布日期 2014.11.25
申请号 US201313940220 申请日期 2013.07.11
申请人 United Microelectronics Corp. 发明人 Fu Ssu-I;Hung Yu-Hsiang;Chen Cheng-Guo;Chang Chung-Fu;Lin Chien-Ting
分类号 H01L21/8236;H01L21/8234 主分类号 H01L21/8236
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. An epitaxial process, comprising: forming a first gate and a second gate on a substrate; forming two first spacers on the substrate beside the first gate and the second gate respectively; forming two first epitaxial layers having first profiles in the substrate beside the two first spacers respectively;forming a second spacer material covering the first gate and the second gate; etching the second spacer material covering the second gate to form a second spacer on the substrate beside the second gate and expose the first epitaxial layer beside the second spacer while reserving the second spacer material covering the first gate; and replacing the exposed first epitaxial layer in the substrate beside the second spacer by a second epitaxial layer having a second profile different from the first profile, wherein the first epitaxial layers comprise bottom buffer layers, and the bottom buffer layer of the exposed first epitaxial layer remains while the exposed first epitaxial layer is replaced by the second epitaxial layer to serve as a bottom buffer layer of the second epitaxial layer.
地址 Science-Based Industrial Park, Hsin-Chu TW