Photoelectric conversion device

摘要

A main object of the present invention is to provide a photoelectric conversion device which is capable of improving the photoelectric conversion efficiency. The invention comprises: a p-layer; an n-layer; an i-layer disposed between the p-layer and the n-layer; a first electrode connected to the p-layer; and a second electrode connected to the n-layer, wherein the i-layer comprises a wall layer constituted by a first semiconductor, and a quantum structure portion constituted by a second semiconductor disposed in the wall layer; a band gap of the first semiconductor is wider than that of the second semiconductor; when a concentration of the n-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cn1, a concentration of the n-type impurity that may be contained in the region on the p-layer side of the i-layer is defined as Cn2, a concentration of the p-type impurity that may be contained in the middle of the i-layer in a thickness direction thereof is defined as Cp1, and a concentration of the p-type impurity that may be contained in the region on the n-layer side of the i-layer is defined as Cp2, the relations Cn1

主权项

1. A photoelectric conversion device comprising:
a p-layer; an n-layer; an i-layer disposed between the p-layer and the n-layer, the i-layer comprising:
a wall layer including a first semiconductor; anda quantum structure portion including a second semiconductor and disposed in the wall layer,wherein:
a band gap of the first semiconductor is wider than a band gap of the second semiconductor,at least one of a first region on an n-layer side of the i-layer contains a p-type impurity or a second region on a p-layer side of the i-layer contains an n-type impurity,in a case where the first region contains the p-type impurity, a relation Cp1