| 摘要 |
<p>A vertical or three-dimensional non-planar configuration for a decoupling capacitor (240,340,440,540) is provided, which significantly reduces the required die area for capacitors of high charge carrier storage capacity. The non-planar configuration of the decoupling capacitors (240,340,440,540) also provides enhanced pattern uniformity during the highly critical gate patterning process.</p> |
