| 摘要 |
<p>The present invention relates to a semiconductor device. More particularly, the present invention relates to a semiconductor device to solve a problem of deteriorating the data retention characteristic of a memory device. A semiconductor device according to an embodiment of the present invention includes at least one channel layer; insulating layers stacked along the channel layer; first and second gloves which are alternately located between the insulating layers and have different widths; and conductive layers formed in the gloves. According to an embodiment of the present invention, the semiconductor device surrounds the channel layers and data storage patterns separated by the second gloves.</p> |
