| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device.SOLUTION: A vertical semiconductor device composed of a semiconductor having a wider bandgap than silicon comprises: a drain region 2 of a first conductivity type; a drift region 3 of a first conductivity type formed adjacent to the drain region 2; a gate region 4 of a second conductivity type formed inside the drift region 3; a source region 6 of a first conductivity type formed adjacent to the side opposite to the drain region 2 of the drift region 3; and a region 8 of a second conductivity type formed adjacent to the gate region 4 inside the drift region 3, electrically in contact with the source region 6, and having an extension part extending closer to the drain region 2 side than the gate region 4. A channel region is formed between the gate region 4 and the region 8 of the second conductivity type so as to linearly connect the drain region 2 and the source region 6. |
