SEMICONDUCTOR DEVICE COMPRISING MOLD FOR TOP SIDE AND SIDEWALL PROTECTION

摘要

Some implementations provide a semiconductor device that includes a substrate, several metal and dielectric layers coupled to the substrate, and a pad coupled to one of the several metal layers. The semiconductor device also includes a first metal layer coupled to the pad and an under bump metallization layer coupled to the first metal redistribution layer. The semiconductor device further includes a mold layer covering a first surface of the semiconductor device and at least a side portion of the semiconductor device. In some implementations, the mold layer is an epoxy layer. In some implementations, the first surface of the semiconductor device is the top side of the semiconductor device. In some implementations, the mold layer covers the at least side portion of the semiconductor device such that a side portion of at least one of the several metal layers and dielectric layers is covered with the mold layer.

主权项

1. A semiconductor device comprising:
a substrate; a plurality of metal layers and dielectric layers coupled to the substrate; a pad coupled to one of the plurality of metal layers; a first metal redistribution layer coupled to the pad; an under bump metallization (UBM) layer coupled to the first metal redistribution layer; and a mold layer covering a first surface of the semiconductor device and at least a side portion of the semiconductor device.