发明名称 THIN FILM BULK ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING SAME
摘要 A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.
申请公布号 US2014339959(A1) 申请公布日期 2014.11.20
申请号 US201214353561 申请日期 2012.06.07
申请人 Lee Moon Chul;Song In Sang;Kim Duck Hwan;Kim Chul Soo;Son Sang Uk;Shin Jea Shik;Park Ho Soo;Cui Jing 发明人 Lee Moon Chul;Song In Sang;Kim Duck Hwan;Kim Chul Soo;Son Sang Uk;Shin Jea Shik;Park Ho Soo;Cui Jing
分类号 H03H9/17;H01L41/297;H01L41/312;H01L41/332 主分类号 H03H9/17
代理机构 代理人
主权项 1. A film bulk acoustic resonator (FBAR), comprising: an acoustic resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an anchor disposed on both sides of the air gap, the anchor having a thickness identical to that of the air gap.
地址 Yongin-si KR