Method for Forming Semiconductor Structure Having Opening

摘要

According to one embodiment of the present invention, a method for forming a semiconductor structure having an opening is provided. First, a substrate is provided, wherein a first region and a second region are defined on the substrate and an overlapping area of the first region and the second region is defined as a third region. Then, a material layer is formed on the substrate. A first hard mask and a second hard mask are formed on the material layer. The first hard mask in the first region is removed to form a patterned first hard mask. The second hard mask in the third region is removed to form a patterned second hard mask. Lastly, the material layer is patterned by using the patterned second hard mask layer as a mask to form at least an opening in the third region only.

主权项

1. A method for forming a semiconductor structure having an opening, comprising:
providing a substrate, wherein a first region and a second region are defined on the substrate and an overlapping area of the first region and the second region is defined as a third region; forming a material layer on the substrate; forming a first hard mask and a second hard mask on the material layer, wherein the first hard mask is disposed on the second hard mask; removing the first hard mask in the first region to form a patterned first hard mask; removing the second hard mask in the third region to form a patterned second hard mask; and patterning the material layer by using the patterned second hard mask layer as a mask, to form at least an opening only in the third region.