发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes: a substrate; a first region over the substrate, the first region comprising a first n type material; a second region over the substrate and laterally adjacent to the first region, the second region comprising a first p type material; a third region disposed within the second region and laterally separated from the first region, the third region comprising a second n type material; a fourth region disposed atop the third region, the fourth region comprising a second p type material; a fifth region disposed within the first region and laterally separated from the second region, the fifth region comprising a third p type material; and a sixth region disposed atop the fifth region, the sixth region comprising a third n type material. |
申请公布号 |
US2014339676(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201414446557 |
申请日期 |
2014.07.30 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Kuo Hsi-Yu;Lee Ko-Yi |
分类号 |
H01L23/60;H01L29/861;H01L29/66;H01L21/761 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate; a first region over the substrate, the first region comprising a first n type material; a second region over the substrate and laterally adjacent to the first region, the second region comprising a first p type material; a third region disposed within the second region and laterally separated from the first region, the third region comprising a second n type material; a fourth region disposed atop the third region, the fourth region comprising a second p type material; a fifth region disposed within the first region and laterally separated from the second region, the fifth region comprising a third p type material; and a sixth region disposed atop the fifth region, the sixth region comprising a third n type material. |
地址 |
Hsin-Chu TW |