发明名称 |
COMPONENT QUANTITATIVE ANALYSIS METHOD WITH DEPTH OF CIGS THIN FILM UTILIZING LASER INDUCTION DECAY SPECTROMETRY |
摘要 |
PROBLEM TO BE SOLVED: To provide a component quantitative analysis method with a depth of a CIGS thin film, which selects spectral lines whose characteristics are similar among spectral lines of specific elements, and utilizes a value obtained by adding those intensities.SOLUTION: A component quantitative analysis method with a depth of a CIGS thin film according to a first embodiment of this invention includes the steps of: irradiating a CIGS thin film with a laser beam to generate plasma, and obtaining a spectral line generated from the plasma; selecting spectral lines whose characteristics are similar among spectral lines of characteristic elements of the CIGS thin film; and measuring a component composition by utilizing a value obtained by adding the intensities of the selected spectral lines. |
申请公布号 |
JP2014219381(A) |
申请公布日期 |
2014.11.20 |
申请号 |
JP20130268850 |
申请日期 |
2013.12.26 |
申请人 |
GWANGJU INST OF SCIENCE & TECHNOLOGY |
发明人 |
JEONG SUNG HO;KIM CHAN KYU;LEE SEOKHEE;IN JEONG HWAN;LEE HAKJAE |
分类号 |
G01N21/63;H01L31/06 |
主分类号 |
G01N21/63 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|