发明名称 COMPONENT QUANTITATIVE ANALYSIS METHOD WITH DEPTH OF CIGS THIN FILM UTILIZING LASER INDUCTION DECAY SPECTROMETRY
摘要 PROBLEM TO BE SOLVED: To provide a component quantitative analysis method with a depth of a CIGS thin film, which selects spectral lines whose characteristics are similar among spectral lines of specific elements, and utilizes a value obtained by adding those intensities.SOLUTION: A component quantitative analysis method with a depth of a CIGS thin film according to a first embodiment of this invention includes the steps of: irradiating a CIGS thin film with a laser beam to generate plasma, and obtaining a spectral line generated from the plasma; selecting spectral lines whose characteristics are similar among spectral lines of characteristic elements of the CIGS thin film; and measuring a component composition by utilizing a value obtained by adding the intensities of the selected spectral lines.
申请公布号 JP2014219381(A) 申请公布日期 2014.11.20
申请号 JP20130268850 申请日期 2013.12.26
申请人 GWANGJU INST OF SCIENCE & TECHNOLOGY 发明人 JEONG SUNG HO;KIM CHAN KYU;LEE SEOKHEE;IN JEONG HWAN;LEE HAKJAE
分类号 G01N21/63;H01L31/06 主分类号 G01N21/63
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