发明名称 |
ELECTROSTATIC PROTECTIVE ELEMENT AND LIGHT-EMITTING MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protective element that allows surely preventing a leakage current, in a structure using a base of a high-resistance semiconductor.SOLUTION: An electrostatic protective element 10 includes a base 20 composed of a high-resistance semiconductor material. On a first primary surface of the base 20, lands 22 and 23 for external connection are formed with a space along a first direction. On the first primary surface of the base 20, a diode part 30 is formed by a semiconductor process. The diode part 30 is formed between formation regions of the lands 22 and 23 for external connection along the first direction. A high-concentration region 40 has the same polarity as the base 20, and is a region containing more impurities than the base 20. The high-concentration region 40 is annular in the plan view of the base 20 and is formed in a shape surrounding the diode part 30. |
申请公布号 |
JP2014220361(A) |
申请公布日期 |
2014.11.20 |
申请号 |
JP20130098349 |
申请日期 |
2013.05.08 |
申请人 |
TOSHIBA CORP;MURATA MFG CO LTD |
发明人 |
WATANABE KIMINORI;SATO SEIICHI;WATANABE TOSHIYA;OKAWA TADAYUKI;ARAKI SEITO;YAMAMOTO TEIJI |
分类号 |
H01L21/329;H01L21/822;H01L27/04;H01L29/861;H01L29/866;H01L29/868;H01L33/48 |
主分类号 |
H01L21/329 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|