Semiconductor Device and Method for Manufacturing the Same

摘要

A first trench and a second trench are formed in an insulating layer, a transistor including an oxide semiconductor layer in the first trench is formed, and a capacitor is formed along the second trench. A first gate electrode is formed over the first trench, and a second gate electrode is formed under the first trench.

主权项

1. A semiconductor device comprising:
a transistor including:
a gate electrode;a second insulating layer over the gate electrode and a first insulating layer, wherein a first portion of the second insulating layer is located in a first trench of the first insulating layer; andan oxide semiconductor layer over the second insulating layer, the oxide semiconductor layer including a channel formation region, wherein the oxide semiconductor layer is located in the first trench of the first insulating layer; and a capacitor including:
a first electrode;the second insulating layer over the first electrode, wherein a second portion of the second insulating layer is located in a second trench of the first insulating layer; anda second electrode over the second insulating layer.