| 摘要 |
PROBLEM TO BE SOLVED: To provide an industrially excellent silicon epitaxial wafer and a manufacturing method of the silicon epitaxial wafer which is used for a semiconductor device substrate of a memory device, a logic device, or a solid state imaging device, and uses a carbon-doped silicon substrate as raw material.SOLUTION: This invention provides a silicon epitaxial wafer and a manufacturing method of the silicon epitaxial wafer which has a second intermediate epitaxial layer 22 and a first intermediate epitaxial layer 21 doped with a dopant on a silicon substrate 10 cut dowm from a silicon single crystal rod grown by a czochralski method with a carbon concentration of 3×10- 2×10atoms/cmgrown. An epitaxial layer 30 as an element formation region is stacked on the first intermediate epitaxial layer 21. |
