发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes: a substrate; a lower wiring on the substrate; an inter-layer insulating film covering the lower wiring; first and second upper wirings on the inter-layer insulating film and separated from each other; and a semi-insulating protective film covering the first and second upper wirings, wherein the protective film is not provided in a region right above the lower wiring and between the first upper wiring and the second upper wiring.
申请公布号 US2014339674(A1) 申请公布日期 2014.11.20
申请号 US201414447045 申请日期 2014.07.30
申请人 Mitsubishi Electric Corporation 发明人 FUJII Hidenori
分类号 H01L23/60 主分类号 H01L23/60
代理机构 代理人
主权项 1. A semiconductor device comprising: a substrate; first and second lower wirings on the substrate; an inter-layer insulating film covering the first and second lower wirings; first and second upper wirings on the inter-layer insulating film and separated from each other; a trench wiring on the substrate below a region between the first upper wiring and the second upper wiring and connecting the first lower wiring and the second lower wiring; and a semi-insulating protective film covering the first and second upper wirings.
地址 Chiyoda-ku JP