| 主权项 |
1. A light emitting diode, comprising:
a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer comprising a second semiconductor layer, an active layer, and a first semiconductor layer stacked on the substrate in sequence, wherein a first part of the epitaxial growth surface is covered by the first semiconductor layer, and a second part of the epitaxial growth surface is exposed; a first electrode electrically connected with the second semiconductor layer; a second electrode electrically connected with first semiconductor layer; and a patterned carbon nanotube layer fixed between the first semiconductor layer and the substrate, wherein the patterned carbon nanotube layer is a continuous and integrated structure, the patterned carbon nanotube layer comprises a first portion sandwiched between the first semiconductor layer and the substrate, and a second portion covers the second part of the epitaxial growth surface, and the second electrode covers the second portion of the patterned carbon nanotubes layer. |
