Vertical Light Emitting Diode (VLED) Dice Having Confinement Layers With Roughened Surfaces And Methods Of Fabrication

摘要

A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

主权项

1. A vertical light emitting diode (VLED) die comprising:
a first-type confinement layer; an active layer on the first-type confinement layer comprising a multiple quantum well (MQW) configured to emit light; and a second-type confinement layer comprising a roughened surface having a major surface with a pattern of holes therein with a depth (d) in the major surface surrounded by a pattern of protuberances with a height (h) on the major surface.