| 发明名称 |
FILAMENTARY MEMORY DEVICES AND METHODS |
| 摘要 |
Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described. |
| 申请公布号 |
US2014339491(A1) |
申请公布日期 |
2014.11.20 |
| 申请号 |
US201414451179 |
申请日期 |
2014.08.04 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Bi Lei;Cook Beth R.;Milojevic Marko;Ramaswamy Durai Vishak Nirmal |
| 分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a processor; a memory device coupled to the processor, the memory device including a number of memory cells that each include:
a reversible filament region located between a pair of electrodes, the reversible filament region including an insulator forming an interface with an oxygen source material; anda resistor material located between the reversible filament region and at least one of the pair of electrodes. |
| 地址 |
Boise ID US |
