发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a fin-shaped silicon layer on a silicon substrate and a first insulating film around the fin-shaped silicon layer. A pillar-shaped silicon layer resides on the fin-shaped silicon layer. A gate electrode and gate insulating film surround the pillar-shaped silicon layer and a gate line is connected to the gate electrode and extends in a direction orthogonally intersecting the fin-shaped silicon layer. A first diffusion layer resides in an upper portion of the pillar-shaped silicon layer and a second diffusion layer resides in an upper portion of the fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer. A first silicide resides in an upper portion of the first diffusion layer and a second silicide resides in an upper portion of the second diffusion layer. A contact and metal wire are on the second silicide, and a metal wire is on the first contact. |
申请公布号 |
US2014339628(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
US201414449614 |
申请日期 |
2014.08.01 |
申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
分类号 |
H01L29/06;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a fin-shaped silicon layer on a silicon substrate; a first insulating film around the fin-shaped silicon layer; a pillar-shaped silicon layer on the fin-shaped silicon layer; a gate insulating film around the pillar-shaped silicon layer; a gate electrode around the gate insulating film; a gate line connected to the gate electrode and extending in a direction orthogonally intersecting the fin-shaped silicon layer; a first diffusion layer in an upper portion of the pillar-shaped silicon layer; a second diffusion layer in an upper portion of the fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer; a first silicide in an upper portion of the first diffusion layer; a second silicide in an upper portion of the second diffusion layer; a first contact on the second silicide; a first metal wire on the first silicide; and a second metal wire on the first contact. |
地址 |
Peninsula Plaza SG |