The present invention relates to an etching solution composition for multiple films or double films formed with metal films including copper and metal films including molybdenum, and said composition comprises, with respect to the total weight of the composition: H3PO4 25 to 50 weight%; HNO3 0.1 to 7 weight%; CH3COOH 10 to 50 weight%; cyclic amine compound 0.1 to 5 weight%; and residual water.
