| 摘要 |
Asilicon imaging detector tile (216) includes a silicon photosensor layer (302) including a plurality of detector pixels (304), each with a photo-transistor (406),and a silicon electronics layer (314), coupled to the silicon photosensor layer, including a current-to- frequency converter and bias control (404) for each of the plurality of photo-transistor. A method includes sensing, with a photo-transistor of a detector pixel of a silicon photosensor layer of an imaging detector and in an absence of x-ray radiation,a dark current, regulating, with bias control, an amount of the dark current transmitted to a current-to-frequency converter of a silicon electronics layer coupled to the silicon photosensor layer, and converting, with the current-to-frequency converter, the amount of the dark current transmitted to the current-to-frequency converter. |
