| 摘要 |
<p>A reliability maintained period is calculated for each storage area based on the degree of deterioration and read frequency for each storage area of a flash memory, and refresh is executed on each storage area in a planned manner based on the calculated reliability maintained period. A semiconductor storage apparatus 100A is configured so that flash memories 120 to 128 and a memory controller 110 are connected and the flash memories 120 to 128 include a plurality of blocks as storage areas; and the memory controller 110 manages the degree of deterioration and read frequency of the blocks for each of the plurality of blocks, obtains a reliability maintained period of data stored in the block based on the managed degree of deterioration and read frequency of the block, and executes refresh for correcting failure bits of the relevant data by newly storing the data stored in the block in another block based on the obtained reliability maintained period.</p> |
