| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor capable of increasing a threshold voltage and suppressing the rise in the on-resistance. SOLUTION: The field effect transistor includes a first nitride semiconductor layer 13 which is a carrier traveling layer 13; a second nitride semiconductor layer 14, provided on the first nitride semiconductor layer 13 and having a bandgap energy larger than that of the first nitride semiconductor layer, and an InGaN layer 16 and a p-type nitride semiconductor layer 18 and a gate electrode 22 provided, in this order, on the second nitride semiconductor layer 14. The InGaN layer 16 has a first recessed part 19 on the surface right below the gate electrode 22. As a result, the threshold voltage is increased, while suppressing the on-resistance to be fixed; and a normally-off transistor is obtained. COPYRIGHT: (C)2011,JPO&INPIT |
