FABRICATION METHOD OF CIGS ABSORBER LAYERS AND ITS APPLICATION TO THIN FILM SOLAR CELLS
摘要
<p>The present invention relates to a CIGS absorption layer manufacturing method capable of reducing processing costs and increasing the efficiency of a thin solar cell and to a thin solar cell manufacturing method using the same. The CIGS absorption layer manufacturing method of the present invention includes: a substrate settling step of settling a substrate in a sputtering device; a rear electrode forming step of forming a rear electrode by depositing a molybdenum on the substrate; a Cu-Se thin film depositing step of depositing a Cu-Se thin film on the rear electrode by the sputtering of a Cu-Se sputtering target; a liquefaction step of liquefying the Cu-Se thin film; and a CIGS thin film depositing step of depositing a CIGS thin film on Cu-Se liquid by the sputtering of a CIGS single target by using a single process sputtering.</p>
申请公布号
KR101462498(B1)
申请公布日期
2014.11.19
申请号
KR20130158516
申请日期
2013.12.18
申请人
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
发明人
KIM, TAE WON;PARK, JAE CHEOL;LEE, YOUNG JUN;LEE, JEON RYANG;LEE, SEUNG HYOUN