PROCESS OF PREPARING TIN-DOPED INDIUM SULFIDE THIN FILM

摘要

The present invention relates to a solar cell which uses an indium sulfide (In2S3) layer as a non-cadmium buffer layer in a CIGS thin film solar cell, a method for stacking Tin-doped indium sulfide thin films to form a buffer layer grown by a solution growth method, and a solar cell manufactured thereby. The present invention improves the light transmission and electrical conductivity of the Tin-doped indium sulfide thin film and improves the photoelectrical properties of the solar cell by lowering the energy barrier of a conduction band at the interface between CIGS and indium sulfide and reducing recombination loss.