| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which can be manufactured at low temperature and exhibits high electron field-effect mobility. SOLUTION: In the thin film transistor having an active layer which comprises an oxide semiconductor layer, the active layer includes a first area A<SB POS="POST">1</SB>having a first electron affinityχ<SB POS="POST">1</SB>in the film thickness direction from the gate electrode side, and a second area A<SB POS="POST">2</SB>having a second electron affinityχ<SB POS="POST">2</SB>smaller than the first electron affinityχ<SB POS="POST">1</SB>. A well type potential where the first area A<SB POS="POST">1</SB>is a well layer, and the second area A<SB POS="POST">2</SB>and a gate insulating film are a barrier layer is constituted. Here, the active layer comprises the oxide semiconductor layer consisting of a(In<SB POS="POST">2</SB>O<SB POS="POST">3</SB>).b(Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>).c(ZnO), and b/(a+b) of the second area A<SB POS="POST">2</SB>is larger than b/(a+b) of the first area A<SB POS="POST">1</SB>. COPYRIGHT: (C)2012,JPO&INPIT |
