Optical sensor package with through vias

摘要

A wafer-level camera sensor package includes a semiconductor substrate with an optical sensor on a front surface. Through-silicon-vias (TSV) extend through the substrate and provide I/O contact with the sensor from the back side of the substrate. A glass cover is positioned over the front surface, and the cover and substrate are embedded in a molding compound layer (MCL), the front surface of the MCL lying coplanar with the front of the cover, and the back surface lying coplanar with the back of the substrate. Surface-mount devices, electromagnetic shielding, and through-wafer-connectors can be embedded in the MCL. A redistribution layer on the back surface of the MCL includes bottom contact pads for mounting the package, and conductive traces interconnecting the contact pads, TSVs, surface-mount devices, shielding, and through-wafer-connectors. Anisotropic conductive adhesive is positioned on the front of the MCL for physically and electrically attaching a lens array.

主权项

1. A camera module, comprising:
a semiconductor die; an optical sensor circuit positioned on a front face of the die; a plurality of through-silicon vias extending through the die from the front face to a back face opposite the front face of the die, each of the plurality of through-silicon vias being in electrical contact with the optical sensor circuit on the front face of the die; a transparent cover coupled to the die over the front face of the die, the transparent cover having a front face and a back face, the back face of the transparent cover facing the front face of the die, lateral dimensions of the transparent cover being substantially coextensive with lateral dimensions of the die; a molding compound layer in which the die and transparent cover are embedded, a back face of the molding compound layer lying substantially coplanar with the back face of the semiconductor die and a front face of the molding compound layer lying substantially coplanar with the front face of the transparent cover; a redistribution layer extending over the back face of the molding compound layer and the back face of the semiconductor die, the redistribution layer having a plurality of contact pads on a back face thereof, and a plurality of electrically conductive traces interconnecting selected combinations of ones of the plurality of through-silicon vias and ones of the plurality of contact pads; and a packaged electrical device having a surface located on the redistribution layer, the packaged electrical device being embedded in the molding compound layer.