| 发明名称 | Methods of forming a pattern on a substrate | ||
| 摘要 | A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed. | ||
| 申请公布号 | US8889558(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201213712820 | 申请日期 | 2012.12.12 |
| 申请人 | Micron Technology, Inc. | 发明人 | Khurana Ranjan;deVillers Anton J.;Torek Kevin J.;Trapp Shane J.;Light Scott L.;Buntin James M. |
| 分类号 | H01L21/308;B44C1/22;H01L21/302 | 主分类号 | H01L21/308 |
| 代理机构 | Wells St. John, P.S. | 代理人 | Wells St. John, P.S. |
| 主权项 | 1. A method of forming a pattern on a substrate, comprising: forming openings in material of a substrate, the material in which the openings are formed being laterally continuous laterally outside of and among the openings over a region of the substrate after forming the openings; and widening the openings to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. | ||
| 地址 | Boise ID US | ||