发明名称 |
Reflective optical element and EUV lithography appliance |
摘要 |
A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2. |
申请公布号 |
US8891163(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201313939346 |
申请日期 |
2013.07.11 |
申请人 |
Carl Zeiss SMT GmbH |
发明人 |
Trenkler Johann;Mann Hans-Juergen;Nothelfer Udo |
分类号 |
G02B5/08;G03F7/20;G21K1/06;B82Y10/00 |
主分类号 |
G02B5/08 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A reflective optical element for the extreme ultraviolet and soft X-ray wavelength regions, the reflective optical element comprising a multilayer system and a protective layer system, wherein:
a side of the multilayer system facing the protective layer system terminates in an absorber layer, and a reflectivity of the reflective optical element varies by less than 1% for a built-up contamination layer having a thickness that is 10% larger than a thickness d1 of the protective layer system. |
地址 |
Oberkochen DE |