发明名称 Reflective optical element and EUV lithography appliance
摘要 A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.
申请公布号 US8891163(B2) 申请公布日期 2014.11.18
申请号 US201313939346 申请日期 2013.07.11
申请人 Carl Zeiss SMT GmbH 发明人 Trenkler Johann;Mann Hans-Juergen;Nothelfer Udo
分类号 G02B5/08;G03F7/20;G21K1/06;B82Y10/00 主分类号 G02B5/08
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A reflective optical element for the extreme ultraviolet and soft X-ray wavelength regions, the reflective optical element comprising a multilayer system and a protective layer system, wherein: a side of the multilayer system facing the protective layer system terminates in an absorber layer, and a reflectivity of the reflective optical element varies by less than 1% for a built-up contamination layer having a thickness that is 10% larger than a thickness d1 of the protective layer system.
地址 Oberkochen DE