发明名称 Method for manufacturing an electro-optical device
摘要 An object of the present invention is to provide an EL display device having high operation performance and reliability.;A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
申请公布号 US8890172(B2) 申请公布日期 2014.11.18
申请号 US201113009875 申请日期 2011.01.20
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Koyama Jun;Yamamoto Kunitaka;Konuma Toshimitsu
分类号 H01L29/66;H01L21/70;H01L21/02;H01L27/32;H01L51/00;H01L51/52;H01L27/12 主分类号 H01L29/66
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A light emitting device comprising: a wiring line over a substrate; a first insulating film over the wiring line, the first insulating film having an opening overlapped with a part of the wiring line; a first electrode over the first insulating film; a second insulating film covering an edge of the first electrode; a light emitting layer over and in contact with the first electrode; a second electrode over the light emitting layer and a top surface of the second insulating film; and a third insulating film covering the second electrode, wherein the second electrode is electrically connected to the wiring line through the opening, and wherein the wiring line extends towards an edge of the substrate to provide a portion to be electrically connected to a flexible printed circuit.
地址 Kanagawa-ken JP