| 发明名称 | Meander line resistor structure | ||
| 摘要 | A meander line resistor structure comprises a first resistor formed on a first active region, wherein the first resistor is formed by a plurality of first vias connected in series, a second resistor formed on a second active region, wherein the second resistor is formed by a plurality of second vias connected in series and a third resistor formed on the second active region, wherein the third resistor is formed by a plurality of third vias connected in series. The meander line resistor further comprises a first connector coupled between the first resistor and the second resistor. | ||
| 申请公布号 | US8890222(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201213365303 | 申请日期 | 2012.02.03 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yen Hsiao-Tsung;Lin Yu-Ling |
| 分类号 | H01L27/108;H01L29/8605 | 主分类号 | H01L27/108 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. An apparatus comprising: a substrate comprising a plurality of active regions; a first resistor formed over a first active region, wherein the first resistor includes a plurality of first vias connected in series and a bottom surface of the first resistor is in direct contact with a top surface of the first active region; a second resistor formed over a second active region, wherein the second resistor includes a plurality of second vias connected in series and a bottom surface of the second resistor is in direct contact with a top surface of the second active region, and wherein the first active region, the second active region and a gate stack form a transistor; a first connector coupled between the first resistor and the second resistor; and a third resistor formed over the second active region, wherein the third resistor includes a plurality of third vias connected in series. | ||
| 地址 | Hsin-Chu TW | ||