发明名称 |
Method for manufacturing wafer-bonded semiconductor device |
摘要 |
The invention provides a wafer-bonded semiconductor device wherein warpage generated when wafers are bonded is reduced at a low cost ad through a simple process.;In a method for manufacturing a wafer-bonded semiconductor device by bonding a first wafer substrate and a second wafer substrate together, the method of the invention includes a first step of forming in advance bonding members having a bonding function when heated on the wafer-bonded surface sides of the first wafer substrate and the second wafer substrate, respectively; a second step of supplying flux paste containing two or more kinds of powdery materials having reactivity to the surfaces of the bonding members formed in the first step; and a third step of causing excitation to have the flux paste supplied in the second step start reacting. |
申请公布号 |
US8889441(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201013519590 |
申请日期 |
2010.10.27 |
申请人 |
Hitachi, Ltd. |
发明人 |
Takai Toshiaki;Sakigawa Yukio |
分类号 |
H01L21/26;H01L31/18;H01L33/48;H01L21/50;H01L27/146;H01L23/10;H01L33/00;H01S5/42;H01L23/00;H01S5/022 |
主分类号 |
H01L21/26 |
代理机构 |
Antonelli, Terry, Stout & Kraus, LLP. |
代理人 |
Antonelli, Terry, Stout & Kraus, LLP. |
主权项 |
1. A method for manufacturing a wafer-bonded semiconductor device by bonding a first wafer substrate and a second wafer substrate together, comprising:
a first step of forming in advance a bonding member having a bonding function when heated on the wafer-bonded surface sides of said first wafer substrate and said second wafer substrate; subsequent to forming the bonding member, a second step of supplying flux paste containing two or more kinds of powdery materials having reactivity to the surface of said bonding member formed in said first step; a third step of causing excitation for starting the reaction of said flux paste supplied in said second step; a fourth step of reacting the flux paste, the reaction of the flux paste being an exothermic reaction; and a fifth step of allowing the bonding member to exhibit its bonding function by heat generated by the exothermic reaction of the flux paste. |
地址 |
Tokyo JP |